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High electron mobility transistor
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#	Item
41	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-02-27 10:59:53 Indium gallium nitride 2DEG Indium nitride Heterojunction Electron mobility High electron mobility transistor Metalorganic vapour phase epitaxy Transistor Aluminium gallium nitride Chemistry Nitrides Gallium nitride
42	86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-01-23 09:10:57 Semiconductor devices Transistor High electron mobility transistor High-k dielectric Gallium nitride Aluminium gallium nitride Transconductance Chemistry Electronics Nitrides
43	3-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency Add to Reading List Source URL: www.nict.go.jp Language: English - Date: 2013-11-21 18:46:20 Indium gallium arsenide Indium phosphide Transistor Gallium arsenide Microwave Threshold voltage Transmission electron microscopy Chemistry Optoelectronics High electron mobility transistor
44	4 Millimeter Wave Devices 4-1 Research Project on Millimeter-wave Semiconductor Devices Toshiaki MATSUI, Keisuke SHINOHARA, Masataka HIGASHIWAKI, and Nobumitsu HIROSE Add to Reading List Source URL: www.nict.go.jp Language: English - Date: 2013-11-20 20:58:24 Compound semiconductors Inorganic compounds Optoelectronics Integrated circuits High electron mobility transistor Gallium nitride Transistor Gallium arsenide Silicon-germanium Chemistry Electronics Semiconductor devices
45	Micro-Hall Devices Based on High-Electron-Velocity Semiconductors DISSERTATION zur Erlangung des akademischen Grades doctor rerum naturalium Add to Reading List Source URL: edoc.hu-berlin.de Language: English - Date: 2009-10-31 18:15:34 Gallium arsenide Aluminium gallium arsenide Light-emitting diode Chemistry High electron mobility transistor Indium gallium arsenide
46	Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model Add to Reading List Source URL: eprints.whiterose.ac.uk Language: English - Date: 2014-06-04 07:59:15 Electronic design automation Transistor High electron mobility transistor Microwave Gain compression Intermodulation Channel Signal integrity Distortion Electronic engineering Electronics Electromagnetism
47	CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solu Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-07-08 11:55:04 Cree ANT Microwave Technology Telecommunications engineering DBm
48	1764 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-05-08 10:01:10 Semiconductor devices Integrated circuits High electron mobility transistor Transistor Monolithic microwave integrated circuit Gallium nitride Field-effect transistor MOSFET MESFET Electronic engineering Electronics Technology
49	Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com Add to Reading List Source URL: www.hittite.com Language: English - Date: 2014-10-21 17:38:11 Integrated circuits Low-noise amplifier DBm Monolithic microwave integrated circuit High electron mobility transistor Amplifier Sensitivity Electronics Technology Electromagnetism
50	doi:[removed]j.jcrysgro[removed] Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 13:48:24 Superlattice Quantum electronics Gallium arsenide Heterojunction Indium gallium arsenide Quantum well Light-emitting diode High electron mobility transistor Molecular beam epitaxy Chemistry Electronics Spintronics

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